We published a paper entitled “Achieving high spin–orbit torque efficiency and robust thermal stability in the sputter-grown topological bilayer BiSb/Pt” in [Applied Physics Letters 128, 212409 (2026)]. Topological insulators (TIs) are promising candidates for spin–orbit torque (SOT) devices owing to their high charge-to-spin conversion efficiency, but the SOT efficiency of sputtered TI films is usually compromised by the elevated thermal budgets required by CMOS back-end-of-line processing. In this work, we examined the thermal stability of sputter-grown Bi_0.9Sb_0.1/Py films. While the system exhibits a high SOT efficiency (ξ_FMR = 0.83) after annealing at 230 °C, the efficiency decreases by ~65% when the annealing temperature is increased to 400 °C. By inserting a 1.5 nm Pt layer at the Bi_0.9Sb_0.1/Py interface, interfacial intermixing is effectively suppressed, and the stack maintains a strong SOT efficiency of 0.85 even after annealing at 400 °C. These results pave the way for BiSb-based SOT-MRAM and its integration with CMOS technologies. Congratulations to Zui Tao, Zeyi Zhu (equal contribution) ,  and co-workers!!